![]() ![]() The terminals have been indicated by the capital letters E for emitter, C for collector, and B for base. ![]() The doping of the sandwiched layer is also considerably less than that of the outer layer (typically, 10:1 or less).This lower doping level decreases the conductivity (increases the resistance) of this material by limiting the number of “free” carriers. The ratio of the total width to that of the center layer is 150:1. The outer layers have widths much greater than the sandwiched p- or n-type material. The emitter layer is heavily doped, the base lightly doped, and the collector only lightly doped. Both are shown in figure with proper biasing.įigure: Types of transistors: (a) pnp (b) npn. The former is called npn transistor, while latter is called an pnp transistor. Transistor is a three-layer semiconductor device consisting of either two n- and one p-type layer of material or two p- and one n-type layers of material.
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